LI, Jiaqi. Determination of Silicon Carbide Epitaxial Layer Thickness Based on Genetic Algorithm and Transfer Matrix Model. Highlights in Science, Engineering and Technology, [S. l.], v. 159, p. 359–364, 2025. DOI: 10.54097/g85vqp74. Disponível em: http://drphset.com/index.php/ojs/article/view/51. Acesso em: 19 apr. 2026.